DocumentCode :
3095016
Title :
Latest technology improvements of Mitsubishi IGBT modules
Author :
Medaule, Daniel ; Arita, Yasunoba ; Yu, Yoshiharu
Author_Institution :
Mitsubishi Electr. Europe GmbH, Argentre du Plessis, France
fYear :
1996
fDate :
35237
Firstpage :
42491
Lastpage :
42495
Abstract :
IGBTs are now widely used due to the possibility of high frequency, voltage drive, and extensive line up. The IGBT module “U Series”, described in this paper, is a new device having the maximum of the third generation chip performance mounted in a new low inductance package with a new fast soft recovery diode. Lower voltage spikes and solder less connections provide higher reliability. The pioneering concept of the IPM (Intelligent Power Module) was introduced in 1990 by MELCO. Since then, several generations have been introduced. Following the same packaging concept, the new “V Series” is described. For traction applications, a strong demand for high voltage high reliability IGBTs has emerged; the paper will show the H.V. IGBT line up and development schedule. IGBT waveforms, data and behaviour are described
Keywords :
modules; Mitsubishi IGBT modules; U Series; V Series; high voltage IGBTs; intelligent power modules; packaging; reliability; soft recovery diode; solderless connections; third generation chip; traction applications; voltage spikes;
fLanguage :
English
Publisher :
iet
Conference_Titel :
New Developments in Power Semiconductor Devices, IEE Colloquium on (Digest No: 1996/046)
Conference_Location :
London
Type :
conf
DOI :
10.1049/ic:19960862
Filename :
576398
Link To Document :
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