• DocumentCode
    3095264
  • Title

    Growth of 4-inch diameter Li2B4O7 single crystals for SAW devices

  • Author

    Tsutsui, Noriaki ; Ino, Yusaku ; Imai, Koji ; Senguttuvan, Nachimuthu ; Ishii, M.

  • Author_Institution
    Chichibu Fuji Co. Ltd., Ogano, Japan
  • Volume
    1
  • fYear
    2000
  • fDate
    36800
  • Firstpage
    279
  • Abstract
    We report crystal growth of 4-inch diameter and 8-inch long lithium tetraborate (Li2B4O7) single crystals for SAW device applications. The crystals were grown by modified Bridgman method along <110> direction using platinum inserted carbon crucible under nitrogen atmosphere. The seed crystals were of same diameter (108 mm) to that of the crystals grown and of 25 mm in length. The crystals were grown at a rate of up to 0.5 mm/h. Wafers were cut at different places along the length of the ingot for studying the dislocation density distribution by chemical etching and X-ray topography. The EPD at center of wafer was found to be higher (1000 cm2) than at outer area (100 cm2). The SAW velocity has been measured across a 3-inch wafer and it was found that the variation of the velocity at different parts of the wafer was within ±0.04%
  • Keywords
    X-ray topography; crystal growth from melt; dislocation density; dislocation etching; lithium compounds; piezoelectric materials; surface acoustic wave devices; 4 inch; Li2B4O7; SAW device; SAW velocity; X-ray topography; chemical etching; crystal growth; dislocation density distribution; etch pit density; lithium tetraborate single crystal; modified Bridgman method; seed crystal; Atmosphere; Chemicals; Crystals; Etching; Lithium; Nitrogen; Platinum; Surface acoustic wave devices; Surface acoustic waves; Velocity measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium, 2000 IEEE
  • Conference_Location
    San Juan
  • ISSN
    1051-0117
  • Print_ISBN
    0-7803-6365-5
  • Type

    conf

  • DOI
    10.1109/ULTSYM.2000.922556
  • Filename
    922556