Title :
Internally matched GaN FET at C-band with 220W output power and 56% power added efficiency
Author :
Maehara, Hiroaki ; Uchida, Hironaga ; Kosaka, N. ; Kuwata, Eigo ; Yamanaka, Keiji ; Nishihara, J. ; Kawashima, Kimiko ; Nakayama, Makoto
Author_Institution :
Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kamakura, Japan
Abstract :
In this paper, a high power and high efficiency fully internally-matched GaN FET operating at C-band is presented. In this work, a C-band GaN amplifier is designed so that 2nd harmonic impedance is tuned to high efficiency and combining loss is maintained minimum. As a result, 224W output power and 56% power added efficiency was successfully obtained, which is the highest efficiency as for over 200W GaN amplifier operating in C-band.
Keywords :
III-V semiconductors; amplifiers; field effect transistors; gallium compounds; wide band gap semiconductors; C-band GaN amplifier; GaN; internally matched GaN FET; power 220 W; power 224 W; power added efficiency; second harmonic impedance; Gallium nitride; HEMTs; Harmonic analysis; MODFETs; Microwave amplifiers; Power amplifiers; Power generation; High-voltage techniques; MODFET power amplifiers; Pulse measurements;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2012 Asia-Pacific
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-4577-1330-9
Electronic_ISBN :
978-1-4577-1331-6
DOI :
10.1109/APMC.2012.6421597
