Title :
AlN and GaN layers deposited on sapphire or silicon substrates: theory and experiment
Author :
Pastureaud, Th ; Soufyane, A. ; Camou, S. ; Ballandras, S. ; Schenck, D. ; Semond, F. ; Desbois, J. ; Laude, V.
Author_Institution :
LPMO/CNRS, Besancon, France
Abstract :
As the operating frequencies of telecommunication systems increase, surface acoustic wave (SAW) devices would benefit from the propagation on “high velocity” substrates such as sapphire or (100) silicon. However, the excitation of SAW on such materials requires additional piezoelectric layers, such as AlN or GaN, deposited atop their surface. This paper reports on first theoretical and experimental results with such material combinations
Keywords :
aluminium compounds; gallium compounds; piezoelectric thin films; surface acoustic wave devices; Al2O3; AlN; AlN layer; GaN; GaN layer; SAW propagation velocity; Si; piezoelectric layer; sapphire substrate; silicon substrate; surface acoustic wave device; telecommunication system; Acoustic propagation; Acoustic waves; Frequency; Gallium nitride; Green´s function methods; Piezoelectric materials; Silicon; Substrates; Surface acoustic wave devices; Surface acoustic waves;
Conference_Titel :
Ultrasonics Symposium, 2000 IEEE
Conference_Location :
San Juan
Print_ISBN :
0-7803-6365-5
DOI :
10.1109/ULTSYM.2000.922559
