A novel broadband Doherty power amplifier with post-matching structure

Author

Xiaofan Chen ; Wenhua Chen

Author_Institution

Dept. of Electron. Eng., Tsinghua Univ., Beijing, China

fYear

2012

fDate

4-7 Dec. 2012

Firstpage

370

Lastpage

372

Abstract

To enhance the bandwidth of Doherty power amplifiers (DPAs), a novel broadband design method of DPA, so-called post-matching structure, is proposed. The harmonics coupling between Carrier PA and Peak PA is also studied, and suppressed by utilizing harmonic short circuit. Finally, a DPA utilizing 10W GaN HEMT with post-matching structure is designed and implemented, the simulated and measured results show that the proposed DPA exhibits good broadband efficiency performance over the wide frequency range of 800MHz to 1200MHz, it achieves a fractional bandwidth of 40% with the PAE of better than 25% at 6dB back-off from the saturated power.

Keywords

III-V semiconductors; gallium compounds; harmonics; impedance matching; power amplifiers; wide band gap semiconductors; GaN; HEMT; broadband Doherty power amplifier; broadband design method; harmonic short circuit; harmonics coupling; postmatching structure; power 10 W; Bandwidth; Broadband amplifiers; Harmonic analysis; Impedance; Passive optical networks; Power amplifiers; Doherty; GaN HEMT; bandwidth; broadband; harmonic short; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2012 Asia-Pacific

Conference_Location

Kaohsiung

Print_ISBN

978-1-4577-1330-9

Electronic_ISBN

978-1-4577-1331-6

Type

conf

DOI

10.1109/APMC.2012.6421601

Filename

6421601