DocumentCode :
3095544
Title :
A linear supply modulator with high dynamic range for polar transmitters in LTE application
Author :
Junqing Guan ; Negra, Renato
Author_Institution :
UMIC Res. Centre, RWTH Aachen Univ., Aachen, Germany
fYear :
2012
fDate :
4-7 Dec. 2012
Firstpage :
394
Lastpage :
396
Abstract :
The paper presents an implementation of a linear supply modulator with high dynamic range and bandwidth in polar transmitter for LTE applications. The design starts with the analysis of specification requirements for LTE standard signals. Based upon this, a linear supply modulator with power amplifier is designed and implemented in 130 nm technology, achieving a dynamic range of 23 dB and an average efficiency of 18.0 % at 6 dB back-off power. The performance is also verified by using 5 MHz LTE modulated signals without any predistortion techniques. Simulation results show an average EVM of 3.0 % and more than 10 dB margin to spectrum emission mask.
Keywords :
CMOS integrated circuits; Long Term Evolution; modulators; power amplifiers; radio transmitters; LTE application; LTE modulated signals; LTE standard signals; frequency 5 MHz; high dynamic range; linear supply modulator; polar transmitters; power amplifier; size 130 nm; spectrum emission mask; Bandwidth; CMOS integrated circuits; Dynamic range; Linearity; Modulation; Regulators; Transmitters; LDO; LTE; Linear Supply Modulator; Polar Transmitter; Switching-Mode Power Amplifier;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference Proceedings (APMC), 2012 Asia-Pacific
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-4577-1330-9
Electronic_ISBN :
978-1-4577-1331-6
Type :
conf
DOI :
10.1109/APMC.2012.6421609
Filename :
6421609
Link To Document :
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