DocumentCode :
3095589
Title :
PVT variation impact on voltage island formation in MPSoC design
Author :
Majzoub, Sohaib ; Saleh, Resve ; Ward, Rabab
Author_Institution :
SoC Res. Lab., Univ. of British Columbia, Vancouver, BC
fYear :
2009
fDate :
16-18 March 2009
Firstpage :
814
Lastpage :
819
Abstract :
On-chip process, voltage, and temperature (PVT) variations are projected to be a major bottleneck in deep submicron design. Such variations can change performance characteristics and push power budgets beyond their limits. In a voltage/frequency island (VFI) design, the initial VFI´s determined using optimization without considering PVT may not be suitable after fabrication. This can lead to degradation in energy that largely offsets the advantage of using VFI. Thus, it is crucial to include PVT variations in any prefabrication energy optimization algorithm to improve the post-fabricaiton design quality. In this paper, we present a methodology that can reduce the differences by including PVT variations in the optimization. We analyze the PVT impact for different PVT characteristics and propose ways to handle the issue with a penalty of only 3%.
Keywords :
integrated circuit design; system-on-chip; MPSoC design; PVT; frequency island; process voltage and temperature variation; voltage island; Degradation; Design optimization; Dynamic voltage scaling; Fabrication; Frequency; Image processing; Multiprocessing systems; Network-on-a-chip; Power system modeling; Temperature; Process; energy optimization; multiprocessor system on chip; voltage and temperature variations; voltage/frequency islands;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality of Electronic Design, 2009. ISQED 2009. Quality Electronic Design
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-2952-3
Electronic_ISBN :
978-1-4244-2953-0
Type :
conf
DOI :
10.1109/ISQED.2009.4810397
Filename :
4810397
Link To Document :
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