Title :
Linearity and noise of InGaAs multi-quantum-well lasers
Author :
Westbrook, L.D. ; Fletcher, N. ; Cooper, D.M. ; Stevenson, M. ; Aylett, M.
Author_Institution :
British Telecom Res. Lab., Ipswich, UK
Abstract :
Measurements are presented which demonstrate that multiple-quantum-well (MQW) lasers can offer significantly lower noise and distortion levels than equivalent double-heterostructure lasers. Improvements of approximately=10 dB in the laser intensity noise and approximately=8 dB in the second-harmonic distortion have been achieved. These figures are close to the predicted improvement of approximately=12 dB expected in MQW lasers as a result of doubling the laser resonant frequency.<>
Keywords :
III-V semiconductors; electron device noise; gallium arsenide; indium compounds; semiconductor junction lasers; III-V semiconductor; InGaAs multi-quantum-well lasers; MQW lasers; distortion levels; laser intensity noise; laser resonant frequency doubling; linearity; noise; second-harmonic distortion; Indium gallium arsenide; Laser noise; Linearity; Optical noise; Power lasers; Quantum well devices; Quantum well lasers; Resonance; Resonant frequency; Semiconductor device noise;
Conference_Titel :
Broadband Analog Optoelectronics: Devices and Systems, 1990. Conference Digest., LEOS Summer Topical on
Conference_Location :
Monterey, CA, USA
DOI :
10.1109/BAODS.1990.205516
