Title :
Mechanisms and kinetics of the Catastrophic Optical Damage (COD) of high-power semiconductor lasers
Author :
Tomm, Jens W. ; Hempel, Martin ; Krakowski, Michel ; Elsaesser, Thomas
Author_Institution :
Max-Born-Inst., Berlin, Germany
Abstract :
Mechanisms relevant for the COD in GaAs-based diode lasers are reviewed. Experiments, where COD is artificially provoked, represent a main topic. The sequence of events and the kinetics down to a nanosecond timescale are addressed.
Keywords :
III-V semiconductors; gallium arsenide; laser beam effects; semiconductor lasers; GaAs; catastrophic optical damage kinetics; catastrophic optical damage mechanism; high power semiconductor lasers; Degradation; Diode lasers; Kinetic theory; Optical imaging; Optical pulses; Transient analysis;
Conference_Titel :
Photonics Society Summer Topical Meeting Series, 2012 IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4577-1526-6
DOI :
10.1109/PHOSST.2012.6280781
