Title :
A 50 mW 220 GHz power amplifier module
Author :
Radisic, Vesna ; Leong, Kevin M K H ; Mei, Xiaobing ; Sarkozy, Stephen ; Yoshida, Wayne ; Liu, Po-Hsin ; Uyeda, Jansen ; Lai, Richard ; Deal, William R.
Author_Institution :
Northrop Grumman Corp., Redondo Beach, CA, USA
Abstract :
In this paper, a 220 GHz solid-state power amplifier (SSPA) module is presented. Eight-way on-chip power combining is used to achieve a saturated output power ≥ 50 mW over a 217.5 to 220 GHz bandwidth, representing a significant increase in SSPA output power at this frequency compared to prior state of the art. The amplifier MMIC is implemented in coplanar waveguide (CPW) technology and uses sub 50 nm InP HEMT transistors. Two levels of power combining, a 2:1 tandem coupler and a 4:1 Dolph-Chebychev transformer, are realized in CPW. The module demonstrates ≥ 11.5 dB small signal gain from 207 to 230 GHz. Saturated output power ≥ 40 mW was measured from 216 to 222.5 GHz.
Keywords :
coplanar waveguides; high electron mobility transistors; power amplifiers; power combiners; Dolph-Chebychev transformer; HEMT transistors; amplifier MMIC; coplanar waveguide technology; eight-way on-chip power combining; frequency 207 GHz to 230 GHz; frequency 220 GHz; power 50 mW; power amplifier module; solid-state power amplifier; tandem coupler; Bandwidth; Circuit faults; Coplanar waveguides; Frequency; HEMTs; Indium phosphide; MMICs; Power amplifiers; Power generation; Solid state circuits; Coplanar Waveguide; HEMT; MMIC; Module; Power amplifier;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5515248
