DocumentCode :
309595
Title :
Production trimming of SAW devices using CF4 chemistry and its effects on SAW characteristics
Author :
Subramanian, Rajan ; Welter, Jason ; Wright, Peter V.
Author_Institution :
RF Monolithics Inc., Dallas, TX, USA
Volume :
1
fYear :
1996
fDate :
3-6 Nov 1996
Firstpage :
255
Abstract :
This paper presents a method of precise frequency trimming of Surface Acoustic Wave (SAW) devices using Reactive Ion Etching (RIE). The SAW devices are fabricated on quartz wafers and trimmed down in frequency by removing part of the quartz substrate between the electrodes, thus achieving the specified center frequency. A controlled frequency shift in the range of 10 kHz to 400 kHz is demonstrated. It has been observed that quartz etch rates of <100 Å/min. can be controlled, resulting in very low frequency shifts. Also, presealed hybrid and surface mount parts have been successfully trimmed to achieve a desired center frequency. Various parameters and test results are presented with no significant change in insertion loss or bandwidth observed. This method is simple and cost effective in high-volume SAW device production. Finally, a viable low-cost, high-volume production method of SAW device fabrication using this trimming process is demonstrated
Keywords :
electron device manufacture; frequency control; sputter etching; surface acoustic wave filters; surface acoustic wave resonators; surface mount technology; CF4 chemistry; RIE; SAW devices; SAW filters; SAW resonators; SiO2; bandwidth; controlled frequency shift; high-volume SAW device production; hybrid parts; insertion loss; precise frequency trimming; production trimming; quartz etch rates; quartz wafers; reactive ion etching; specified center frequency; surface mount parts; test results; Acoustic waves; Bandwidth; Electrodes; Etching; Frequency; Insertion loss; Production; Surface acoustic wave devices; Surface acoustic waves; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium, 1996. Proceedings., 1996 IEEE
Conference_Location :
San Antonio, TX
ISSN :
1051-0117
Print_ISBN :
0-7803-3615-1
Type :
conf
DOI :
10.1109/ULTSYM.1996.583969
Filename :
583969
Link To Document :
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