A systematic method to design high efficiency harmonic tuned power amplifier with PAE over 80%

Author

Shuyi Xie ; Songbai He ; Zhebin Hu ; Xuan Ding ; Fei You

Author_Institution

Sch. of Electron. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2012

fDate

4-7 Dec. 2012

Firstpage

463

Lastpage

465

Abstract

This paper presents the design, implementation and measurement results of a high efficiency harmonic tuned PA at 2.85GHz using a high power GaN HEMT transistor. Based on large signal equivalent circuit model and computer-aided design tools, optimum fundamental and harmonic impedances are obtained to maximize PAE. The compromise between PAE and complexity along with proper selection of matching circuit topology simplify design and adjustment procedure, and also reduce the dimension of circuit. With the stimulus of continuous wave, the measurement results show a maximum power-added efficiency of 82.2%, a maximum drain efficiency of 86.6%, a power gain of 12.91dB with 39.91dBm output power.

Keywords

III-V semiconductors; circuit CAD; gallium compounds; high electron mobility transistors; network topology; power amplifiers; wide band gap semiconductors; GaN; HEMT transistor; PAE; computer-aided design tool; continuous wave stimulus; drain efficiency; frequency 2.85 GHz; gain 12.91 dB; harmonic impedance; harmonic tuned power amplifier; large signal equivalent circuit model; matching circuit topology; power gain; power-added efficiency; Gain; Generators; Harmonic analysis; Load modeling; Power amplifiers; Power system harmonics; Transistors; Power amplifier; harmonic manipulation; load-pull; matching network; waveform engineering;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2012 Asia-Pacific

Conference_Location

Kaohsiung

Print_ISBN

978-1-4577-1330-9

Electronic_ISBN

978-1-4577-1331-6

Type

conf

DOI

10.1109/APMC.2012.6421632

Filename

6421632