Title :
Design of X-band 40 W Pulse-Driven GaN HEMT power amplifier
Author :
Hae-Chang Jeong ; Hyun-Seok Oh ; Ahmed, Arif ; Kyung-Whan Yeom
Author_Institution :
Dept. Radio Sci. & Eng., Chungnam Nat. Univ., Daejeon, South Korea
Abstract :
In this paper, a design of X-band (9~10 GHz) 40 W Pulse-Driven GaN HEMT power amplifier is presented. The selected active device is a commercially available GaN HEMT chip from TriQuint. The optimum input and output impedances of the GaN HEMT are extracted from load-pull measurement using automated tuner system from Maury Inc. and load-pull simulation using nonlinear model from TriQuint. The combined impedance transformer type matching circuit of the power amplifier is designed using EM co-simulation. The fabricated power amplifier which is 15×17.8 mm2 shows an efficiency of above 32%, power gain of 8.7~6.7 dB and output power of 46.7~44.7 dBm at 9~10 GHz with pulse width of 10 μsec and duty of 10 %.
Keywords :
HEMT integrated circuits; III-V semiconductors; gallium compounds; integrated circuit design; integrated circuit manufacture; integrated circuit modelling; microwave amplifiers; power amplifiers; wide band gap semiconductors; EM co-simulation; GaN; HEMT chip; Maury Inc; TriQuint; X-band pulse-driven HEMT power amplifier; active device; automated tuner system; frequency 9 GHz to 10 GHz; gain 8.7 dB to 6.7 dB; impedance transformer type matching circuit; input impedances; load-pull measurement; load-pull simulation; nonlinear model; output impedances; power 40 W; time 10 mus; Frequency measurement; Gallium nitride; HEMTs; Impedance; Impedance measurement; Power amplifiers; Semiconductor device measurement; Fixture De-Embedding; GaN HEMT; Load-pull Measurement; Power Amplifier Module; Pre-Match;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2012 Asia-Pacific
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-4577-1330-9
Electronic_ISBN :
978-1-4577-1331-6
DOI :
10.1109/APMC.2012.6421633
