Title :
SAW characteristics of AlN films deposited on various substrates using ECR plasma enhanced CVD and reactive RF sputtering
Author :
Soh, Ju-Won ; Lee, Won-Jong ; Park, Jang-Ho ; Lee, Soong-Won
Author_Institution :
Dept. of Mater. Sci. & Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
Abstract :
Highly c-axis oriented AlN films were deposited on SiO2/Si, Si3N4/Si, Si(100) and Si(111) substrates using ECR plasma enhanced CVD (ECR PECVD) and reactive RF sputtering. The AlN films deposited by ECR PECVD had lower surface roughness and lower insertion loss than the sputter-deposited films. ECR PECVD film showed phase velocity of 3270 m/s, whereas sputter-deposited film showed phase velocity of 5100 m/s. The contents of impurities (especially oxygen) was thought to play an important role in the degree of c-axis orientation and SAW velocity
Keywords :
acoustic materials; aluminium compounds; piezoelectric thin films; plasma CVD coatings; sputtered coatings; surface acoustic waves; AlN; AlN film; ECR plasma enhanced CVD; SAW phase velocity; Si; Si(100) substrate; Si(111) substrate; Si3N4-Si; Si3N4/Si substrate; SiO2-Si; SiO2/Si substrate; c-axis orientation; impurities; insertion loss; reactive RF sputtering; surface roughness; Impurities; Insertion loss; Plasma properties; Radio frequency; Rough surfaces; Semiconductor films; Sputtering; Substrates; Surface acoustic waves; Surface roughness;
Conference_Titel :
Ultrasonics Symposium, 1996. Proceedings., 1996 IEEE
Conference_Location :
San Antonio, TX
Print_ISBN :
0-7803-3615-1
DOI :
10.1109/ULTSYM.1996.583978
