DocumentCode :
309603
Title :
Properties of high quality ZnO films deposited by an RF magnetron mode electron cyclotron resonance (ECR) sputtering system
Author :
Kadota, Michio ; Minakata, Makoto
Author_Institution :
Murata Manuf. Co. Ltd., Kyoto, Japan
Volume :
1
fYear :
1996
fDate :
3-6 Nov 1996
Firstpage :
303
Abstract :
The properties of ZnO film deposited by an RF-magnetron-mode ECR sputtering system, which has added magnets to the outside of a cylindrical zinc metal (Zn) target of the RF-mode ECR sputtering system reported previously, are investigated. The ZnO film on the glass substrate deposited by this system was capable of driving a 1.3 GHz fundamental Rayleigh SAW for the first time. These films exhibit almost the same effective electromechanical coupling factors (k(eff)) as the theoretical k(eff) values calculated by finite element method (FEM) using the constants of ZnO single crystal and lower insertion loss in comparison with the films deposited by the DC-mode ECR and the RF-mode ECR. The ZnO film on R-plane sapphire deposited by this system shows a (112¯0) plane epitaxial ZnO film, which is capable of driving a 2.54 GHz Sezawa wave. By measuring a photoluminescence of a thin epitaxial ZnO film with thickness of 1.2 μm, free excitons are observed for the first time
Keywords :
Rayleigh waves; acoustic materials; piezoelectric thin films; sputtered coatings; surface acoustic waves; zinc compounds; 1.3 GHz; 2.54 GHz; R-plane sapphire substrate; RF magnetron mode ECR sputter deposition; Rayleigh SAW; Sezawa wave; ZnO; ZnO epitaxial film; electromechanical coupling factor; finite element method; free excitons; glass substrate; insertion loss; photoluminescence; Finite element methods; Glass; Insertion loss; Magnetic properties; Magnets; Radio frequency; Sputtering; Substrates; Surface acoustic waves; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium, 1996. Proceedings., 1996 IEEE
Conference_Location :
San Antonio, TX
ISSN :
1051-0117
Print_ISBN :
0-7803-3615-1
Type :
conf
DOI :
10.1109/ULTSYM.1996.583979
Filename :
583979
Link To Document :
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