Title :
Characteristics of IIDT on ZnO/diamond/Si structures
Author :
Hachigo, A. ; Malocha, D.C. ; Richie, S.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA
Abstract :
Characteristics of interdigitated interdigital transducer (IIDT) structure on ZnO/diamond/Si structures are discussed including velocity dispersion. The pass band width and the null frequency band width of the IIDT structure are narrower than that of non-dispersive surface acoustic wave (SAW) velocity because of the velocity dispersion. A comparison of the velocity dispersive case with the non velocity dispersive case for sidelobe reduction for the IIDT structure will be presented
Keywords :
acoustic dispersion; acoustic wave velocity; diamond; interdigital transducers; silicon; surface acoustic wave transducers; zinc compounds; IIDT; SAW velocity dispersion; ZnO-C-Si; ZnO/diamond/Si layered structure; interdigitated interdigital transducer; null frequency band width; pass band width; sidelobe reduction; Acoustic waves; Dispersion; Electrodes; Energy storage; Equivalent circuits; Frequency; Impedance; Surface acoustic wave devices; Surface acoustic waves; Zinc oxide;
Conference_Titel :
Ultrasonics Symposium, 1996. Proceedings., 1996 IEEE
Conference_Location :
San Antonio, TX
Print_ISBN :
0-7803-3615-1
DOI :
10.1109/ULTSYM.1996.583981
