DocumentCode
309605
Title
Characteristics of IIDT on ZnO/diamond/Si structures
Author
Hachigo, A. ; Malocha, D.C. ; Richie, S.M.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA
Volume
1
fYear
1996
fDate
3-6 Nov 1996
Firstpage
313
Abstract
Characteristics of interdigitated interdigital transducer (IIDT) structure on ZnO/diamond/Si structures are discussed including velocity dispersion. The pass band width and the null frequency band width of the IIDT structure are narrower than that of non-dispersive surface acoustic wave (SAW) velocity because of the velocity dispersion. A comparison of the velocity dispersive case with the non velocity dispersive case for sidelobe reduction for the IIDT structure will be presented
Keywords
acoustic dispersion; acoustic wave velocity; diamond; interdigital transducers; silicon; surface acoustic wave transducers; zinc compounds; IIDT; SAW velocity dispersion; ZnO-C-Si; ZnO/diamond/Si layered structure; interdigitated interdigital transducer; null frequency band width; pass band width; sidelobe reduction; Acoustic waves; Dispersion; Electrodes; Energy storage; Equivalent circuits; Frequency; Impedance; Surface acoustic wave devices; Surface acoustic waves; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium, 1996. Proceedings., 1996 IEEE
Conference_Location
San Antonio, TX
ISSN
1051-0117
Print_ISBN
0-7803-3615-1
Type
conf
DOI
10.1109/ULTSYM.1996.583981
Filename
583981
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