Title :
Shock sensors using direct bonding of LiNbO3 crystals
Author :
Ohtsuchi, T. ; Sugimoto, M. ; Ogura, T. ; Tomita, Y. ; Kawasaki, O. ; Eda, K.
Author_Institution :
Device Eng. Dev. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Abstract :
We have developed a shock sensor made with a bimorph type cantilever using by a technique of directly bonding piezoelectric single crystals. The cantilever´s polarization-inverted structure was achieved by directly bonding LiNbO3 single-crystal wafers having reverse polarization. This technique did not require any bonding agent. The basic characteristics of the shock sensor were evaluated. The resonance frequency of the cantilever having a length of 2 mm was 20 kHz. The sensor made from 140° rotated Y cut LiNbO3 wafers had a high sensitivity of 6.4 mV/G, and excellent linearity
Keywords :
dielectric polarisation; lithium compounds; piezoelectric transducers; shock measurement; shock waves; wafer bonding; 2 mm; 20 kHz; LiNbO3; bimorph type cantilever; direct bonding; linearity; piezoelectric single crystal; polarization inversion; resonance frequency; reverse polarization; rotated Y cut LiNbO3 wafer; sensitivity; shock sensor; Crystals; Electric shock; Ferroelectric materials; Mechanical sensors; Piezoelectric actuators; Piezoelectric polarization; Resonance; Resonant frequency; Sensor phenomena and characterization; Wafer bonding;
Conference_Titel :
Ultrasonics Symposium, 1996. Proceedings., 1996 IEEE
Conference_Location :
San Antonio, TX
Print_ISBN :
0-7803-3615-1
DOI :
10.1109/ULTSYM.1996.583985
