A 2.4 GHz CMOS power amplifier using asymmetric MOSFETs

Author

Szu-Ling Liu ; Yu-Chien Huang ; Ying-Jen Chen ; Tsu Chang ; Chin, Alvin

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2012

fDate

4-7 Dec. 2012

Firstpage

490

Lastpage

492

Abstract

In this paper, a two-stage 2.4 GHz power amplifier (PA) using the high-breakdown-voltage asymmetric NMOSFETs was implemented in a 0.18-μm CMOS technology. In this process, the conventional NMOSFETs have a drain-to-source breakdown voltage (BV_dss) about 3.5V, therefore restricting the available output power in PA designs. However, by using the special asymmetric NMOSFETs in the proposed PA, the circuit can safely operate at a supply voltage from 1.8 to 2.75V. Under a 2.75V operation, good power performances include a power gain of 20.4 dB, an output 1-dB compression point (P_{out, 1dB}) of 21.5dBm and a power-added-efficiency (PAE) of 29.6%.

Keywords

CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; electric breakdown; power MOSFET; PA; PAE; drain-to-source breakdown voltage; efficiency 29.6 percent; frequency 2.4 GHz; gain 1 dB; gain 20.4 dB; high-breakdown-voltage asymmetric NMOSFET; power-added-efficiency; size 0.18 mum; two-stage CMOS power amplifier; voltage 1.8 V to 2.75 V; CMOS integrated circuits; MOSFETs; Power amplifiers; Power generation; Power measurement; Radio frequency; PAE; breakdown voltage; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2012 Asia-Pacific

Conference_Location

Kaohsiung

Print_ISBN

978-1-4577-1330-9

Electronic_ISBN

978-1-4577-1331-6

Type

conf

DOI

10.1109/APMC.2012.6421640

Filename

6421640