Title :
Carrier accumulation in the optical confinement layer, its effect on power limit in high power and brightness laser diodes, and laser design to overcome this limitation
Author :
Avrutin, Eugene ; Ryvkin, Boris
Author_Institution :
Dept. of Electron., Univ. of York, York, UK
Abstract :
We analyse efficiency degradation due to carrier accumulation in the optical confinement layer of high-power laser diodes. Narrow asymmetric waveguide structures are shown to reduce this limitation while enabling low built-in losses and fundamental-mode operation.
Keywords :
optical losses; optical waveguides; semiconductor lasers; asymmetric waveguide structures; brightness laser diodes; built-in losses; carrier accumulation; efficiency degradation; fundamental-mode operation; high power laser diodes; optical confinement layer; Charge carrier density; Charge carrier processes; Laser theory; Optical saturation; Optical waveguides; Power generation; Waveguide lasers; High-power lasers; asymmetric structures; efficiency; far field; modelling;
Conference_Titel :
Photonics Society Summer Topical Meeting Series, 2012 IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4577-1526-6
DOI :
10.1109/PHOSST.2012.6280868
