Title :
Temperature influence mechanism of micromechanical silicon oscillating accelerometer
Author :
Dong Jin-hu ; Qiu An-ping ; Shi Ran
Author_Institution :
MEMS Inertial Technol. Res. Center, Nanjing Univ. of Sci. & Technol., Nanjing, China
Abstract :
Bias value and scale factor (SF) are two main performance indexes of silicon oscillating accelerometer(SOA). A deep research on that how temperature influence the performance of SOA by changing the effective stiffness of resonators, is made so as to reduce the temperature sensitivity of it in this paper. There is a wide difference between testing and theoretic parameters of bias value and SF through temperature experiment on SOA, both of which have obvious temperature sensitivity. Then the influence mechanism of Young modulus and bond stress is deduced theoretically and simulated. The temperature sensitivity of resonant frequency caused by Young modulus and bond stress are -1Hz/°C and 178Hz/°C respectively. How the bond stress comes up during processing is described and its connection with the stress of resonator is discussed. Seeing that the stress of resonator is the main factor which causes temperature sensitivity of SOA, some isolation beams used to isolate the residual stress are designed. In addition, A novel temperature compensation measure based on electrostatic stiffness is proposed, which points out the direction of accurate compensation.
Keywords :
Young´s modulus; accelerometers; elemental semiconductors; internal stresses; micromechanical devices; silicon; Si; Young modulus; bond stress; electrostatic stiffness; micromechanical silicon oscillating accelerometer; residual stress; resonant frequency; resonator stress; temperature influence mechanism; Resonant frequency; Semiconductor optical amplifiers; Silicon; Stress; Temperature; Temperature measurement; Temperature sensors; bond stress; electrostatic stiffness; isolation beams; silicon oscillating accelerometer; temperature influence;
Conference_Titel :
Power Engineering and Automation Conference (PEAM), 2011 IEEE
Conference_Location :
Wuhan
Print_ISBN :
978-1-4244-9691-4
DOI :
10.1109/PEAM.2011.6135118