DocumentCode
3097215
Title
Membrane InP saturable absorbers on silicon as building blocks for transparent optical networks
Author
Raz, Oded ; Tassaert, M. ; Roelkens, Gunther ; Dorren, H.J.S.
Author_Institution
Eindhoven Univ. of Technol., Eindhoven, Netherlands
fYear
2013
fDate
23-27 June 2013
Firstpage
1
Lastpage
4
Abstract
As silicon photonics continues to gain research and industrial relevance, some of the building blocks in this technology such as modulators and switches still suffer from limitation when it comes to insertion losses and/or extinction ratio. In the past two years we have been investigating a promising new building block for silicon on insulator (SOI) circuits which is based on ultra-thin narrow stripes of InP bonded on top of SOI, which operate as saturable absorbers at very low optical power levels. The unique properties of these membrane InP switches (MIPS) make them ideally suitable as complementary components to SOI devices. By controlling the band gap of the active layers in the membrane as well as the confinement of light critical properties of such MIPS can be determined and tailored to specific applications. In this talk we will highlight two exciting applications of MIPS on SOI. First we will show how they enhance the performance of silicon based modulators by regenerating the signal through their non-linear response. Secondly we will show how they may solve a unique engineering challenge for next generation access networks by operating as optically controlled switches with high extinction ratio and no electrical power supply.
Keywords
III-V semiconductors; elemental semiconductors; indium compounds; membranes; optical communication equipment; optical fibre networks; optical saturable absorption; optical switches; silicon; silicon-on-insulator; InP; MIPS; SOI; Si; band gap; extinction ratio; insertion losses; membrane InP switches; membrane indium phosphidesaturable absorbers; next generation access networks; silicon based modulators; silicon photonics; silicon-on-insulator circuits; transparent optical networks; Absorption; Bit error rate; Erbium; Indium phosphide; Insertion loss; Optical switches; Silicon; active remote nodes for access networks; all optical switches; membrane on silicon devices; saturable absorbers; signal regeneration; silicon photonics;
fLanguage
English
Publisher
ieee
Conference_Titel
Transparent Optical Networks (ICTON), 2013 15th International Conference on
Conference_Location
Cartagena
ISSN
2161-2056
Type
conf
DOI
10.1109/ICTON.2013.6602850
Filename
6602850
Link To Document