• DocumentCode
    309727
  • Title

    A short gate length pseudomorphic HEMT process for mm wave applications

  • Author

    Colquhoun, Alex

  • Author_Institution
    United Monolithic Semicond., Ulm, Germany
  • Volume
    2
  • fYear
    1996
  • fDate
    13-16 Oct 1996
  • Firstpage
    756
  • Abstract
    A number of important applications including radar warning sensors for automobiles and communication between the base stations of mobile telephone networks use or will use millimeter wave frequencies. This work, carried out in ESPRIT project 6016 “CLASSIC”, has established a technological basis for the mass production of semiconductor components for cheap transmit and receive modules operating at millimeter wave frequencies. The high frequency part of the equipment is the cost determining factor. In the project, a transistor technology has been developed so that the major part of the millimeter wave section of the equipment can be integrated onto one semiconductor chip
  • Keywords
    high electron mobility transistors; millimetre wave field effect transistors; semiconductor technology; CLASSIC; ESPRIT project 6016; MM wave applications; automobile radar warning sensor; base station communication; mass production; mobile telephone network; receive module; semiconductor chip; short gate length pseudomorphic HEMT process; transistor technology; transmit module; Automobiles; Base stations; Frequency; Millimeter wave communication; Millimeter wave radar; Millimeter wave technology; Millimeter wave transistors; Mobile communication; PHEMTs; Radar applications;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Circuits, and Systems, 1996. ICECS '96., Proceedings of the Third IEEE International Conference on
  • Conference_Location
    Rodos
  • Print_ISBN
    0-7803-3650-X
  • Type

    conf

  • DOI
    10.1109/ICECS.1996.584472
  • Filename
    584472