Temperature compensated bulk acoustic thin film resonators

Author

Lakin, K.M. ; McCarron, K.T. ; McDonald, J.F.

Author_Institution

TFR Technol. Inc., Bend, OR, USA

Volume

1

fYear

2000

fDate

36800

Firstpage

855

Abstract

Thin film resonators have been made that exhibit a high degree of temperature compensation. These resonators are composed of piezoelectric aluminum nitride films, aluminum top and bottom electrodes, and are compensated with layers of silicon dioxide within the resonator. The resonators are fabricated with the solidly mounted resonator (SMR) configuration using a sequence of aluminum nitride and silicon dioxide reflector layers. Silicon dioxide has a positive temperature coefficient and can be used to offset the -25 ppm per degree C coefficient of aluminum nitride. Results are reported on hermetic packaging, temperature cycle testing, temperature coefficient measurements, and preliminary ageing

Keywords

III-V semiconductors; acoustic resonators; aluminium; aluminium compounds; compensation; crystal resonators; packaging; piezoelectric semiconductors; piezoelectric thin films; semiconductor device testing; semiconductor thin films; silicon compounds; wide band gap semiconductors; Al-AlN-SiO₂-Al; ageing; aluminum top electrodes; bottom electrodes; hermetic packaging; piezoelectric aluminum nitride films; positive temperature coefficient; reflector layers; silicon dioxide; solidly mounted resonator configuration; temperature coefficient measurements; temperature compensated bulk acoustic thin film resonators; temperature compensation; temperature cycle testing; Aluminum nitride; Electrodes; Film bulk acoustic resonators; Optical films; Packaging; Piezoelectric films; Semiconductor films; Silicon compounds; Temperature measurement; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2000 IEEE

Conference_Location

San Juan

ISSN

1051-0117

Print_ISBN

0-7803-6365-5

Type

conf

DOI

10.1109/ULTSYM.2000.922677

Filename

922677