Title :
Temperature compensated bulk acoustic thin film resonators
Author :
Lakin, K.M. ; McCarron, K.T. ; McDonald, J.F.
Author_Institution :
TFR Technol. Inc., Bend, OR, USA
Abstract :
Thin film resonators have been made that exhibit a high degree of temperature compensation. These resonators are composed of piezoelectric aluminum nitride films, aluminum top and bottom electrodes, and are compensated with layers of silicon dioxide within the resonator. The resonators are fabricated with the solidly mounted resonator (SMR) configuration using a sequence of aluminum nitride and silicon dioxide reflector layers. Silicon dioxide has a positive temperature coefficient and can be used to offset the -25 ppm per degree C coefficient of aluminum nitride. Results are reported on hermetic packaging, temperature cycle testing, temperature coefficient measurements, and preliminary ageing
Keywords :
III-V semiconductors; acoustic resonators; aluminium; aluminium compounds; compensation; crystal resonators; packaging; piezoelectric semiconductors; piezoelectric thin films; semiconductor device testing; semiconductor thin films; silicon compounds; wide band gap semiconductors; Al-AlN-SiO2-Al; ageing; aluminum top electrodes; bottom electrodes; hermetic packaging; piezoelectric aluminum nitride films; positive temperature coefficient; reflector layers; silicon dioxide; solidly mounted resonator configuration; temperature coefficient measurements; temperature compensated bulk acoustic thin film resonators; temperature compensation; temperature cycle testing; Aluminum nitride; Electrodes; Film bulk acoustic resonators; Optical films; Packaging; Piezoelectric films; Semiconductor films; Silicon compounds; Temperature measurement; Transistors;
Conference_Titel :
Ultrasonics Symposium, 2000 IEEE
Conference_Location :
San Juan
Print_ISBN :
0-7803-6365-5
DOI :
10.1109/ULTSYM.2000.922677
