• DocumentCode
    3097317
  • Title

    Wafer-scale synthesis and transfer of high quality monolayer graphene for nanoelectronics

  • Author

    Tao, Li ; Lee, Jongho ; Holt, Milo ; Akinwande, Deji

  • Author_Institution
    Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA
  • fYear
    2011
  • fDate
    7-9 Dec. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Recent progress in synthesis of large area mono- or few layer graphene on copper catalyst[1] has enabled various fascinating sensor, optical and electrical applications.[2-4] The idea for graphene to be employed for next generation nanoelectronics, however, require high quality films with wafer-scale uniformity and low defect density. Here we report our progress on wafer-scale synthesis and transfer of low-defect monolayer graphene for field-effect transistors that will enable graphene nanoelectronics.
  • Keywords
    copper; field effect transistors; graphene; monolayers; nanoelectronics; defect density; field-effect transistors; high quality films; monolayer graphene; next generation nanoelectronics; wafer-scale synthesis; Copper; Educational institutions; Films; Resistance; Silicon; Substrates; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium (ISDRS), 2011 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4577-1755-0
  • Type

    conf

  • DOI
    10.1109/ISDRS.2011.6135137
  • Filename
    6135137