DocumentCode :
3097317
Title :
Wafer-scale synthesis and transfer of high quality monolayer graphene for nanoelectronics
Author :
Tao, Li ; Lee, Jongho ; Holt, Milo ; Akinwande, Deji
Author_Institution :
Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA
fYear :
2011
fDate :
7-9 Dec. 2011
Firstpage :
1
Lastpage :
2
Abstract :
Recent progress in synthesis of large area mono- or few layer graphene on copper catalyst[1] has enabled various fascinating sensor, optical and electrical applications.[2-4] The idea for graphene to be employed for next generation nanoelectronics, however, require high quality films with wafer-scale uniformity and low defect density. Here we report our progress on wafer-scale synthesis and transfer of low-defect monolayer graphene for field-effect transistors that will enable graphene nanoelectronics.
Keywords :
copper; field effect transistors; graphene; monolayers; nanoelectronics; defect density; field-effect transistors; high quality films; monolayer graphene; next generation nanoelectronics; wafer-scale synthesis; Copper; Educational institutions; Films; Resistance; Silicon; Substrates; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
Type :
conf
DOI :
10.1109/ISDRS.2011.6135137
Filename :
6135137
Link To Document :
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