Title :
Device modeling analysis and simulation of SiC P-i-N diode under pulsed power conditions
Author :
Ogunniyi, Aderinto ; O´Brien, Heather ; Scozzie, Charles ; Shaheen, W. ; Zhang, Juyong ; Lin Cheng ; Agarwal, Abhishek ; Temple, Victor
Author_Institution :
US Army Res. Lab., Adelphi, MD, USA
Abstract :
Silicon carbide (SiC) material properties make it well suited for pulsed power applications. SiC has a higher electric field breakdown, allowing for thinner, more compact high voltage devices. Silicon carbide also has a much shorter minority carrier lifetime which equates to much faster recovery time; it also has good thermal conductivity equating to minimum cooling requirements for a pulsed system and a high Young´s modulus enabling SiC to withstand high current and voltage pulse stresses [1].
Keywords :
Young´s modulus; carrier lifetime; p-i-n diodes; semiconductor device models; silicon compounds; thermal conductivity; SiC; Young modulus; device modeling analysis; electric field breakdown; minority carrier lifetime; p-i-n diode; pulsed power conditions; recovery time; thermal conductivity; Integrated circuit modeling; Numerical models; P-i-n diodes; PIN photodiodes; Semiconductor process modeling; Silicon carbide; USA Councils;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135141
