High-field carrier velocity in silicon tri-gate nanowire pMOSFETs with <100>- and <110>-oriented channel

Author

Saitoh, Masumi ; Ota, Kensuke ; Tanaka, Chika ; Nakabayashi, Yukio ; Uchida, Kazunori ; Numata, Toshinori

Author_Institution

Adv. LSI Technol. Lab., Toshiba Corp., Japan

fYear

2011

fDate

7-9 Dec. 2011

Firstpage

1

Lastpage

2

Abstract

Nanowire transistors (NW Tr.) are promising device structures for ultralow-power LSI [1-3]. In our previous work, we demonstrated I_on improvement of short-channel NW nFETs and pFETs by adopting <;100>;-oriented NW channel instead of conventional <;110>; channel [3]. Although low-field mobility in <;100>;- and <;110>;-oriented NW Tr. have been thoroughly studied [3,4], the origin of higher I_on in short-channel <;100>;-oriented NW Tr. than in <;110>; NW Tr. is still unclear. In order to clarify the determining factors of I_on in short-channel devices, understanding of high-field carrier velocity as well as low-field mobility is required.

Keywords

MOSFET; carrier mobility; nanowires; silicon; high-field carrier velocity; low-field mobility; nanowire channel; silicon tri-gate nanowire pMOSFETs; ultralow-power LSI; Backscatter; Logic gates; MOSFETs; Nanoscale devices; Resistance; Scattering; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium (ISDRS), 2011 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4577-1755-0

Type

conf

DOI

10.1109/ISDRS.2011.6135145

Filename

6135145