Growth and characterization of nanowires and nanorods on Al2O3(110), Si(111) and SiO2/p-Si(100) by MOCVD

We report growth of ZnO nanowires and nanorods using an atmospheric pressure, horizontal MOCVD, without any metal catalyst. The ZnO structures were grown on sapphire (110), Si(111) and SiO₂/p-Si(111) substrates by controlling the ZnO precursor flow, growth temperature and distance from the injector. Prior to the growth of the nanostructure, a thin film of ZnO was grown at 400°C for 2 mins, DeZ was used as ZnO precursor with a flow rate of 200 sccm, N₂O was used as oxygen source with a flow rate of 50 sccm and N₂ was used as the carrier gas.