• DocumentCode
    3097556
  • Title

    A new technique to extract TDDB acceleration parameters from fast Q bd tests

  • Author

    Chen, Yuan ; Suehle, John S. ; Shen, Bruce ; Bernstein, Joseph ; Messick, Cleston ; Chaparala, Prasad

  • Author_Institution
    Center for Reliability Eng., Maryland Univ., College Park, MD, USA
  • fYear
    1997
  • fDate
    13-16 Oct 1997
  • Firstpage
    67
  • Lastpage
    69
  • Abstract
    A new technique is proposed to extract long-term constant voltage stress time-dependent dielectric breakdown (TDDB) acceleration parameters from highly accelerated constant current injection breakdown tests. This is the first time that an accurate correlation of the highly accelerated breakdown tests to long-term TDDB tests has been presented
  • Keywords
    dielectric thin films; electric breakdown; electric current; integrated circuit reliability; integrated circuit testing; life testing; Si; SiO2-Si; TDDB acceleration parameter extraction; accelerated constant current injection breakdown tests; charge-to-breakdown tests; constant voltage stress time-dependent dielectric breakdown; gate oxide reliability; highly accelerated breakdown tests; long-term TDDB tests; time-dependent dielectric breakdown acceleration parameters; Breakdown voltage; Design for quality; Dielectric breakdown; Electric breakdown; Electronic equipment testing; Life estimation; Life testing; Occupational stress; Semiconductor device testing; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 1997 IEEE International
  • Conference_Location
    Lake Tahoe, CA
  • Print_ISBN
    0-7803-4205-4
  • Type

    conf

  • DOI
    10.1109/IRWS.1997.660287
  • Filename
    660287
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3097556