• DocumentCode
    3097587
  • Title

    A quasi-analytical model of the junctionless nanowire field-effect transistor

  • Author

    Gnani, E. ; Reggiani, S. ; Gnudi, A. ; Baccarani, G.

  • Author_Institution
    ARCES, Univ. of Bologna, Bologna, Italy
  • fYear
    2011
  • fDate
    7-9 Dec. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this work we examine and validate a recently-published model for the junctionless (JL) nanowire FET with cylindrical geometry by carrying out extensive comparisons with TCAD simulation results over a wide range of impurity concentrations and device diameters.
  • Keywords
    CAD; field effect transistors; impurities; nanoelectronics; nanowires; TCAD simulation; device diameter; impurity concentration; junctionless nanowire field-effect transistor; quasi-analytical model; Computational modeling; Electric potential; Impurities; Neodymium; Numerical models; Semiconductor process modeling; Solid modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium (ISDRS), 2011 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4577-1755-0
  • Type

    conf

  • DOI
    10.1109/ISDRS.2011.6135150
  • Filename
    6135150
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3097587