Title :
A quasi-analytical model of the junctionless nanowire field-effect transistor
Author :
Gnani, E. ; Reggiani, S. ; Gnudi, A. ; Baccarani, G.
Author_Institution :
ARCES, Univ. of Bologna, Bologna, Italy
Abstract :
In this work we examine and validate a recently-published model for the junctionless (JL) nanowire FET with cylindrical geometry by carrying out extensive comparisons with TCAD simulation results over a wide range of impurity concentrations and device diameters.
Keywords :
CAD; field effect transistors; impurities; nanoelectronics; nanowires; TCAD simulation; device diameter; impurity concentration; junctionless nanowire field-effect transistor; quasi-analytical model; Computational modeling; Electric potential; Impurities; Neodymium; Numerical models; Semiconductor process modeling; Solid modeling;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135150
