DocumentCode
3097614
Title
A 206–294GHz 3-stage amplifier in 35nm InP mHEMT, using a thin-film microstrip environment
Author
Griffith, Zach ; Ha, W. ; Chen, Peng ; Kim, Dongkyu ; Brar, B.
Author_Institution
Teledyne Scientific Company, Thousand Oaks, United States
fYear
2010
fDate
23-28 May 2010
Firstpage
1
Lastpage
1
Abstract
We present a compact, 3-stage millimeter-wave monolithic integrated circuit (MMIC) amplifier with an operating frequency of 206–294GHz, formed by common-source configured 35nm Lg InP mHEMTs and a multi-layer thin-film microstrip (TFM) wiring environment. The amplifier S21 mid-band gain gain is 11–16dB, 3dB bandwidth at 294GHz, and 82.5mW Pdc. This is the first reported InP HEMT MMIC operating in G-,H-band employing thin-film microstrip. Because the TFM ground-plane shields the signal interconnects from the substrate, well behaved device (0.1–67, 140–200, 210–310GHz) and amplifier (210–320GHz) measurements are presented from an unthinned, 25mil substrate. The total size of this 3-stage amplifier is only 0.77mm × 0.40mm.
Keywords
Frequency; Indium phosphide; MIMICs; MMICs; Microstrip; Substrates; Thin film circuits; Transistors; Wiring; mHEMTs;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location
Anaheim, CA
ISSN
0149-645X
Print_ISBN
978-1-4244-6056-4
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2010.5515340
Filename
5515340
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