Title :
Validation and extension of IGBT compact model with parameter extraction
Author :
Li, Z.M. ; Mawby, P.A. ; Khanniche, M.S. ; Board, K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Wales, UK
Abstract :
An experimental validation of a new compact model for the IGBT is presented. Two typical types of commercial power IGBTs, punch-through and non-punch through IGBTs are used for this purpose (Philips BUK854 and Siemens BUP200). The important effects for correct simulation are identified and incorporated into an enhanced version of IGBT compact model. An experimentally based optimization parameter extraction methodology is proposed and used throughout the validation. A good match between simulation and measurement is obtained
Keywords :
insulated gate bipolar transistors; Philips BUK854; Siemens BUP200; compact model; nonpunch-through IGBTs; optimization; parameter extraction; power IGBTs; punch-through IGBTs; simulation;
Conference_Titel :
New Developments in Power Semiconductor Devices, IEE Colloquium on (Digest No: 1996/046)
Conference_Location :
London
DOI :
10.1049/ic:19960865
