Analysis and design of a fully integrated, linear dual band LNA for WLAN and Wi-MAX application

This work reports development of a fully integrated dual band low noise amplifier(LNA) in 0.18 μm CMOS at 2.8/3.4GHz for WLAN and Wi-MAX applications. Dual-band operation is achieved by switching one capacitor each in input and output matching networks. Measured results show a gain of 5 dB/7 dB at 2.8GHz/3.4GHz. Key features of the LNA are: high IIP3 >; +1.5dBm (in both bands) while consuming 5.7mA from a 1.8V supply, a single control input and active area of 0.16mm². An analytical expression for voltage gain has also been derived and verified in both bands.