Title :
Frequency-configurable electronics
Author :
Simin, Grigory ; Gaska, Remis
Author_Institution :
EE Dept., Univ. of South Carolina, Columbia, SC, USA
Abstract :
The talk reviews new approaches to fabricating high-speed high-power electronic devices with frequency configurable elements. Such elements behave as conductors at low frequencies and as insulators at high frequencies. Frequency dependent impedance allows independently tune the DC, microwave or pulse device performance. We illustrate the frequency-configurable electrode techniques using its application to microwave switches, field-effect transistors with increased breakdown voltage and other high-power power high-frequency devices.
Keywords :
conductors (electric); electrodes; gallium compounds; high electron mobility transistors; insulators; microwave switches; DC device performance; GaN HFET; breakdown voltage device; conductor; field-effect transistor; frequency configurable element; frequency dependent impedance; frequency-configurable electrode technique; frequency-configurable electronics; high-power power high-frequency device; high-speed high-power electronic device; insulator; microwave device performance; microwave switch; pulse device performance; Electrodes; HEMTs; Logic gates; MODFETs; Microwave circuits; Microwave transistors;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135160
