Modeling reliability of GaN/AlGaN/AlN/GaN HEMT

III-V nitrides have attracted intense interest recently for applications in high-temperature, high-power electronic devices operating at microwave frequencies. Gallium Nitride (GaN), with a much larger band gap than Gallium Arsenide, has drawn recent interest in industry for use in blue laser diodes and microwave power field-effect transistors. Even though GaN has three times higher effective electron mass than GaAs, which results in a low-field mobility less than that of GaAs, GaN has some distinct advantages in various applications. Some of these are larger band gap, larger peak electron velocity, higher thermal stability; all of which enables it to be a very promising material for high power, high temperature and high frequency applications.