DocumentCode :
3097947
Title :
Analysis of Current Transport Mechanism and Optimal Design of Transparent Anode in Gate Commutated Thyristor
Author :
Cailin, Wang ; Gao Yong
Author_Institution :
Dept. of Electron. Eng., Xi´´an Univ. of Technol.
fYear :
2005
fDate :
16-16 June 2005
Firstpage :
519
Lastpage :
522
Abstract :
The current transport mechanism of transparent anode in gate commutated thyristor (GCT) was analyzed theoretically and the expression of electron current density was deduced. The switching characteristic of asymmetry GCT was simulated by using MEDICI simulator. The results show that the analysis of current transport mechanism for transparent anode is reasonable. In addition, the structural parameters of the transparent anode are optimized based on the analysis of on-state characteristic of asymmetry GCT
Keywords :
anodes; current density; design engineering; thyristors; MEDICI simulator; asymmetry GCT; current transport mechanism; electron current density; gate commutated thyristor; transparent anode; Anodes; Buffer layers; Current density; Electrons; Insulated gate bipolar transistors; Medical simulation; Power engineering and energy; Power semiconductor devices; Thyristors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Specialists Conference, 2005. PESC '05. IEEE 36th
Conference_Location :
Recife
Print_ISBN :
0-7803-9033-4
Type :
conf
DOI :
10.1109/PESC.2005.1581674
Filename :
1581674
Link To Document :
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