Title :
Suppression of ion-induced charge collection against soft-error
Author :
Kishimoto, T. ; Takai, M. ; Ohno, Y. ; Sayama, H. ; Nishimura, T.
Author_Institution :
Fac. of Eng. Sci., Osaka Univ., Japan
Abstract :
Suppression of charge carrier collection has been investigated to clarify the validity of buried well structures against soft-errors in dynamic random-access memories (DRAMs). The suppression of charge carrier collection of twin wells on a Si wafer and a twin well on epitaxial wafers has been measured for DRAM application. The collection of charge carriers induced by microprobe irradiation could be reduced by a buried layer formed at different Boron dose. The carrier collection efficiency of the diode with a twin well (i.e., retrograde well) with a higher dose can be reduced to 50% that of the diode with a twin well in an epitaxial layer
Keywords :
DRAM chips; boron; buried layers; carrier density; elemental semiconductors; errors; ion implantation; semiconductor diodes; semiconductor epitaxial layers; semiconductor quantum wells; silicon; DRAMs; Si wafer; Si:B; buried layer; buried well structure; charge carrier collection; diode; epitaxial wafer; microprobe ion irradiation; retrograde well; soft error; twin well; Charge carriers; Current measurement; Diodes; Epitaxial layers; Laboratories; Materials science and technology; Probes; Protons; Substrates; Ultra large scale integration;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586098
