Title :
Dose control of MeV-implantation by photoluminescence heterodyne technique
Author :
Wagner, M. ; Geiler, H.D. ; Funk, K.
Author_Institution :
JenaWave Engn. & Consult., Jena, Germany
Abstract :
Phosphorous ions were implanted in Si with energies from 0.3 MeV up to 2 MeV over a wide dose range. The implantation was carried out by use of an EATON NV-GSD/HE high energy implanter. A new nondestructive evaluation technique, the so called Photoluminescence Heterodyne technique (PLH) is applied to measure the damage density-dose correlation
Keywords :
ion implantation; nondestructive testing; phosphorus; photoluminescence; production testing; silicon; 0.3 to 2 MeV; EATON NV-GSD/HE high energy implanter; Si:P; damage density-dose correlation; dose control; ion implantation; nondestructive evaluation technique; photoluminescence heterodyne technique; semiconductor device manufacture; Charge carrier lifetime; Density measurement; Frequency; Ion implantation; Laser beams; Luminescence; Monitoring; Optical modulation; Photoluminescence; Radiative recombination;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586188
