Title :
Modeling of a new liner stressor comprising Ge2Sb2Te5 (GST): Amorphous-crystalline phase change and stress induced in FinFET channel
Author :
Cheng, Ran ; Ding, Yinjie ; Liu, Bin ; Yeo, Yee-Chia
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore, Singapore
Abstract :
We report the first simulation study of stress induced in a FinFET channel due to a new stress liner Ge2Sb2Te5 (GST). Volume change in the GST material wrapped around a FinFET was used to induce stress in the channel. We show that a large compressive channel stress can be induced. The channel stress could be further enhanced with device scaling.
Keywords :
MOSFET; antimony compounds; crystallisation; germanium compounds; semiconductor device models; stress analysis; FinFET channel; GST material; Ge2Sb2Te5; amorphous-crystalline phase change; channel stress; liner stressor modelling; volume change; Compressive stress; Crystallization; FinFETs; Logic gates; Mercury (metals); Numerical models;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135174
