• DocumentCode
    3098055
  • Title

    Modeling of a new liner stressor comprising Ge2Sb2Te5 (GST): Amorphous-crystalline phase change and stress induced in FinFET channel

  • Author

    Cheng, Ran ; Ding, Yinjie ; Liu, Bin ; Yeo, Yee-Chia

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore, Singapore
  • fYear
    2011
  • fDate
    7-9 Dec. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report the first simulation study of stress induced in a FinFET channel due to a new stress liner Ge2Sb2Te5 (GST). Volume change in the GST material wrapped around a FinFET was used to induce stress in the channel. We show that a large compressive channel stress can be induced. The channel stress could be further enhanced with device scaling.
  • Keywords
    MOSFET; antimony compounds; crystallisation; germanium compounds; semiconductor device models; stress analysis; FinFET channel; GST material; Ge2Sb2Te5; amorphous-crystalline phase change; channel stress; liner stressor modelling; volume change; Compressive stress; Crystallization; FinFETs; Logic gates; Mercury (metals); Numerical models;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium (ISDRS), 2011 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4577-1755-0
  • Type

    conf

  • DOI
    10.1109/ISDRS.2011.6135174
  • Filename
    6135174
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3098055