Source of chaos in radio frequency MOSFETs

Author

Park, Myunghwan ; Rodgers, John ; Lathrop, Daniel

Author_Institution

Inst. for Res. in Electron. & Appl. Phys., Univ. of Maryland, College Park, MD, USA

fYear

2011

fDate

7-9 Dec. 2011

Firstpage

1

Lastpage

2

Abstract

We have developed a chaotic oscillator based on the logic gates, which are implemented with the basic metal oxide field effect transistors (MOSFETs). Given the importance of MOSFETs in modern electronics, it is important to understand the source of the nonlinearity, and how it originates from the intrinsic characteristics of MOSFETs. In past studies, the chaos was observed in a simple nonlinear circuit, the driven resistor-inductor-diode circuit. In this work, we examine the voltage dependent overlapped capacitance (Miller capacitance), and dynamic transconductance gain, and show they are the significant sources of nonlinearity in GHz operation of chaotic MOSFET circuits.

Keywords

MOSFET; chaos; logic gates; radiofrequency oscillators; semiconductor device models; (Miller capacitance; chaos sources; chaotic MOSFET circuits; chaotic oscillator; dynamic transconductance gain; logic gates; metal oxide field effect transistors; nonlinear circuit; radiofrequency MOSFET; resistor-inductor-diode circuit; voltage dependent overlapped capacitance; Capacitance; Chaos; Educational institutions; Logic gates; MOSFETs; Physics; USA Councils;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium (ISDRS), 2011 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4577-1755-0

Type

conf

DOI

10.1109/ISDRS.2011.6135175

Filename

6135175