Source of chaos in radio frequency MOSFETs

We have developed a chaotic oscillator based on the logic gates, which are implemented with the basic metal oxide field effect transistors (MOSFETs). Given the importance of MOSFETs in modern electronics, it is important to understand the source of the nonlinearity, and how it originates from the intrinsic characteristics of MOSFETs. In past studies, the chaos was observed in a simple nonlinear circuit, the driven resistor-inductor-diode circuit. In this work, we examine the voltage dependent overlapped capacitance (Miller capacitance), and dynamic transconductance gain, and show they are the significant sources of nonlinearity in GHz operation of chaotic MOSFET circuits.