DocumentCode :
309807
Title :
Performance of SDS BF3 vs. high pressure BF3 in ion implantation
Author :
Boyd, Wendell, Jr. ; Hilkene, Martin ; McManus, Jim ; Edwards, Doug ; Romig, Terry ; Bennett, Joe
Author_Institution :
Appl. Materials, Austin, TX, USA
fYear :
1996
fDate :
16-21 Jun 1996
Firstpage :
299
Lastpage :
302
Abstract :
With the new development of low pressure packaging of boron trifluoride (BF3), better known as Safe Delivery Source (SDS), key process concerns were investigated on a 9500×R implanter to compare SDS to high pressure (HP) BF3. The key process concerns were broken down into five categories: (1) Maximum Beam Currents, (2) Sheet Resistance, (3) Depth Profiles, (4) Contamination, and (5) Mass Spectra. Release rates from a fully open SDS cylinder were studied by ATMI
Keywords :
boron compounds; ion implantation; safety; 9500xR implanter; ATMI; BF3; SDS BF3; SDS cylinder; Safe Delivery Source; beam current; boron trifluoride; contamination; depth profile; high pressure BF3; ion implantation; low pressure packaging; mass spectra; process gas; sheet resistance; Boron; Feeds; Gases; Ion implantation; Life testing; Magnetic materials; Mass spectroscopy; Monitoring; Solids; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
Type :
conf
DOI :
10.1109/IIT.1996.586268
Filename :
586268
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=309807
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