Title :
SDSTM gas source feed material systems for ion implantation
Author_Institution :
Microelectron. Div., IBM, Essex Junction, VT, USA
Abstract :
The introduction of arsine and phosphine in an atmospheric cylinder provides a safer alternative for users of high pressure hydrides and an alternative for users of solid materials that provides increased productivity. This paper is an overview of an SDS gas source installation at IBM. Concern with respect to SDS applications in high current machines is addressed. Safety aspects and emission treatment are also discussed
Keywords :
gases; integrated circuit manufacture; ion implantation; materials handling; safety; AsH3; IBM; PH3; Zeolite 5A; atmospheric cylinder; emission treatment; gas source feed material systems; gas source installation; high current machines; high pressure hydrides; ion implantation; productivity; safe delivery sources; safety aspects; semiconductor manufacturing; Control systems; Costs; Feeds; Fluid flow measurement; Implants; Ion implantation; Ion sources; Pressure control; Transducers; Weight control;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586271
