• DocumentCode
    309810
  • Title

    Production proven electrostatic platen for medium current implantation

  • Author

    Frutiger, W. ; Eddy, R. ; Brown, D.A. ; Mack, M.E.

  • Author_Institution
    Varian Ion Implant Syst., Gloucester, MA, USA
  • fYear
    1996
  • fDate
    16-21 Jun 1996
  • Firstpage
    346
  • Lastpage
    349
  • Abstract
    Electrostatic wafer platens (ESPs) for ion implant systems offer enormous benefits in manufacturing productivity. This paper describes and compares the performance of the standard clamp in current use in more than 50 user sites with a new cooled platen design. As would be expected the ESP platens do not affect dosing, charging, or front side particulates. Device damage from the ESP is not an issue because of the safe AC operating mode. Cooling performance of 1 watt/cm2 for 200 mm wafers using nitrogen as the cooling gas has been obtained. Tests indicate that backside particles are dependent on the surface smoothness of the platen and the smoothness of the back side of the wafer being clamped
  • Keywords
    electrostatic devices; ion implantation; 200 mm; backside particles; electrostatic platen; manufacturing productivity; medium current ion implantation; nitrogen cooling gas; wafer clamp; Clamps; Cooling; Dielectrics; Electrodes; Electrostatic precipitators; Implants; Manufacturing; Production; Switches; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. Proceedings of the 11th International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    0-7803-3289-X
  • Type

    conf

  • DOI
    10.1109/IIT.1996.586283
  • Filename
    586283