DocumentCode :
309813
Title :
The effect of beam scanning methods in process transfer
Author :
Tripsas, Nicholas H.
Author_Institution :
Adv. Micro Devices Inc., Sunnyvale, CA, USA
fYear :
1996
fDate :
16-21 Jun 1996
Firstpage :
516
Lastpage :
518
Abstract :
Equipment matching is a major consideration for process transfers between fab areas. When process transfers occur between fabs with similar equipment, simple dose matching is often adequate. However, it is not enough in the ease where transfers occur between fabs with fundamentally different equipment sets. Implant parameters such as tilt angle, twist angle, multiple-positioning and continuous-rotation may have profound effects on uniformity, two-dimensional shadowing, and dopant profiles. These effects, in turn, may result in threshold voltage shifts, changes in drive current, transistor asymmetry, and wide distributions of electrical parameters across wafers
Keywords :
beam handling techniques; ion implantation; semiconductor device manufacture; beam scanning; continuous-rotation; dopant profile; dose matching; drive current; electrical parameters; equipment matching; ion implantation; multiple-positioning; process transfer; semiconductor fab; threshold voltage; tilt angle; transistor asymmetry; twist angle; two-dimensional shadowing; uniformity; wafer processing; Boron; Drives; Implants; Shadow mapping; Silicon; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
Type :
conf
DOI :
10.1109/IIT.1996.586420
Filename :
586420
Link To Document :
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