Title :
An accurate and computationally efficient model for phosphorus implants into (100) single-crystal silicon
Author :
Morris, S. ; Ghante, V. ; Lam, L.M. ; Yang, S.-H. ; Morris, M. ; Tasch, A.F. ; Kamenitsa, D. ; Sheng, J. ; Magee, C.
Author_Institution :
Texas Univ., Austin, TX, USA
Abstract :
In this paper is reported the first comprehensive, computationally efficient and highly accurate model for predicting phosphorus depth profiles for implants into (100) single-crystal silicon with explicit dependence on energy, dose, and tilt and rotation (twist) angles. This model has been implemented into the widely used process simulators, SUPREM3, SUPREM4 and FLOOPS
Keywords :
doping profiles; electronic engineering computing; elemental semiconductors; ion implantation; phosphorus; semiconductor process modelling; silicon; (100) single-crystal Si; FLOOPS; P depth profiles; P implants; SUPREM3; SUPREM4; Si:P; computationally efficient model; process simulators; Circuit simulation; Cities and towns; Computational modeling; Doping profiles; Fabrication; Implants; Parameter extraction; Predictive models; Semiconductor devices; Silicon devices;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586447
