Ranges and moments of depth distributions of boron and phosphorus implanted into silicon in the energy range 1.7-5.0 MeV with an Eaton NV-GSD/VHE implanter

High energy implantation of dopant atoms is used to form buried layers of high conductivity in silicon. These layers have many potential applications, including triple wells for FLASH memory devices, buried layers for CCD devices, and damage induced gettering regions in all devices. In order to make optimum use of very high energy dopant implants, the depth and profile shape characteristics of these implants need to be determined. This paper presents the results of depth profiling by SIMS of implants of boron and phosphorus in silicon. The implants were done on an Eaten NV-GSD/VHE mechanically scanned implanter with energies of 1.7-3.0 MeV for boron and 35 MeV for phosphorus, doses of 1×10¹³/cm² to 1×10¹⁵/cm ², and tilt/twist orientations of 0°/0°, 5.2°/16.7°, and 7°/27°. The four central moments of the depth distributions, as well as the peak depth have been calculated for each of the profiles. The projected ranges of all these implants are underestimated by TRIM92 calculations