Title :
Low energy Ar+ cleaning, damage and sputtering of InP{100} surfaces
Author :
Sung, M.M. ; Lee, S.H. ; Lee, S.M. ; Marton, D. ; Perry, S.S. ; Rabalais, J.W.
Author_Institution :
Dept. of Chem., Houston Univ., TX, USA
Abstract :
Low energy Ar+ sputtering of InP{100} surfaces has been studied over the ion energy range of 5-500 eV. Bombardment was performed by means of a mass-selected, UHV ion beam system with a well-defined energy for which the energy spread is ΔE=±3 eV. The surface composition and morphology were analyzed in situ by AES and ex situ by AFM. The carbon contaminants and the oxide layers can be removed by Ar + bombardment with ⩾30 eV and ⩾60 eV ions, respectively. However, In-rich clusters and islanding are observed for ion energies above ≈40 eV. The results show that a combination of 30 eV ion bombardment and annealing to ≈350°C produces a clean, defect-free surface
Keywords :
Auger effect; III-V semiconductors; atomic force microscopy; indium compounds; ion-surface impact; sputtering; surface cleaning; 5 to 500 eV; AES; AFM; Ar; InP; InP{100} surface; annealing; carbon contaminant; cleaning; clusters; damage; islanding; low energy Ar+ ion bombardment; oxide layer; sputtering; surface composition; surface morphology; Atomic layer deposition; Chemicals; Cleaning; Indium phosphide; Rough surfaces; Shape; Sputtering; Surface fitting; Surface roughness; Surface topography;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586469
