Annealing effects on surface morphology of Si(100)

Author

Lee, S.M. ; Lee, S.H. ; Sung, M.M. ; Marton, D. ; Perry, S.S. ; Rabalais, J.W.

Author_Institution

Dept. of Chem., Houston Univ., TX, USA

fYear

1996

fDate

16-21 Jun 1996

Firstpage

650

Lastpage

653

Abstract

The temperature and time dependencies of Si(100) surface morphology have been investigated using in situ Auger Electron Spectroscopy and ex situ Atomic Force Microscopy. Surface carbon and oxygen concentrations are lowered below the detection limits of AES at ~900°C while a roughening process starts before this temperature. The proportional relationship of Si(100) surface roughness to annealing temperature and time reflects that the annealing process is dominated by silicon surface evaporation. The abrupt decrease of surface roughness at above 1100°C is attributed to the dissolution of SiC into the bulk

Keywords

Auger effect; annealing; atomic force microscopy; elemental semiconductors; silicon; surface topography; 900 to 1100 C; Auger electron spectroscopy; Si; Si(100) surface; SiC dissolution; annealing; atomic force microscopy; surface evaporation; surface impurity concentration; surface morphology; surface roughness; Annealing; Atomic force microscopy; Electron microscopy; Heating; Rough surfaces; Silicon carbide; Surface contamination; Surface morphology; Surface roughness; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. Proceedings of the 11th International Conference on

Conference_Location

Austin, TX

Print_ISBN

0-7803-3289-X

Type

conf

DOI

10.1109/IIT.1996.586488

Filename

586488