Title :
Light-induced carriers in metal/porous silicon/p-Si structures
Author :
Korcala, Andrzej ; Lukasiak, Zbigniew ; Zawadzka, Anna ; Plociennik, Przemyslaw ; Bala, Waclaw ; Bartkiewicz, Krzysztof
Author_Institution :
Inst. of Phys., Nicolaus Copernicus Univ., Torun, Poland
Abstract :
In this paper light-induced carriers in Al/PS/p-Si/Al structure are presented. Nyquist plots and admittance as a function of frequency and wavelengths were in detail analyzed. Admittance spectroscopy is a power tool in the study of semiconductors. This diagnostic technique gives information about uncompensated conductance and capacitance of single and multilayer structures. Moreover we can find out structural properties of investigated material.
Keywords :
aluminium; elemental semiconductors; metal-semiconductor-metal structures; multilayers; porous semiconductors; silicon; Al-Si-Si-Al; Nyquist plots; admittance spectroscopy; capacitance value; diagnostic technique; frequency function; light-induced carriers; metal-porous silicon-p-Si structures; multilayer structures; power tool; semiconductor materials; single structures; uncompensated conductance; Admittance; Capacitance; Frequency measurement; Silicon; Temperature measurement; Voltage measurement; Wavelength measurement; Admittance spectroscopy; Nyquist plots; Photoadmittance; Porous silicon;
Conference_Titel :
Transparent Optical Networks (ICTON), 2013 15th International Conference on
Conference_Location :
Cartagena
DOI :
10.1109/ICTON.2013.6602903
