DocumentCode :
3098224
Title :
Dispersion engineering in aluminum nitride phononic crystal plates
Author :
Bongsang Kim ; Rakich, Peter T. ; Branch, Darren W. ; Clews, P. ; Nguyen, John ; Olsson, Roy H.
Author_Institution :
Bosch Res. & Technol. Center, Palo Alto, CA, USA
fYear :
2013
fDate :
21-25 July 2013
Firstpage :
721
Lastpage :
724
Abstract :
The dispersive properties of phononic crystals can be utilized to manipulate the phononic impedance of a material and to engineer the frequency-delay response of time domain signal processing circuits. In this paper we study, in both the frequency and time domains, the dispersive properties of phononic crystals formed in thin suspended plates of aluminum nitride.
Keywords :
III-V semiconductors; aluminium compounds; phonon dispersion relations; phononic crystals; wide band gap semiconductors; AlN; aluminum nitride phononic crystal plates; aluminum nitride thin suspended plates; dispersion engineering; dispersive properties; frequency domain; frequency-delay response; material phononic impedance; time domain signal processing circuits; Crystals; Delays; Dispersion; III-V semiconductor materials; Impedance; Lattices; Transducers; Aluminum nitride; dispersion; phononic crystal plates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium (IUS), 2013 IEEE International
Conference_Location :
Prague
ISSN :
1948-5719
Print_ISBN :
978-1-4673-5684-8
Type :
conf
DOI :
10.1109/ULTSYM.2013.0186
Filename :
6725123
Link To Document :
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