The influence of volume trap states on field emission of diamond-like films

Summary form only given. It is shown that at a field emission of diamond-like films and dielectric structures the emission current is limited by space charge of electrons in a conductivity band. It is shown that taking into account the local fields created by charged deep volume states on the surface of such structure result in appearing of emission centers. It, in turn reduces to sharp decreasing of anode voltage, where an emission current begins. Therefore definition of effective work function on declination of Fowler-Nordheim plot is incorrect. It is shown, that the number of centers of an emission is proportional N² . (N-is the volume concentration of traps). Thus there is an optimal concentration of traps, when their influence on emission processes is maximum. The processes of a current transportation through the film are considered. It is proved that with due regard for the interaction of electrons with traps there is an effective diffusion of electrons through the film to emission surface. The effective coefficient of volume diffusion is calculated